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| APTGF300A120G Phase leg NPT IGBT Power Module VBUS Q1 G1 VCES = 1200V IC = 300A @ Tc = 80C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS Compliant Max ratings 1200 400 300 600 20 1780 600A @ 1200V Unit V A V W APTGF300A120G - Rev 2 July, 2006 E1 OUT Q2 G2 E2 0/VBUS G1 E1 VBUS 0/VBUS OUT E2 G2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF300A120G All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 300A Tj = 125C VGE = VCE, IC = 12mA VGE = 20V, VCE = 0V Min Typ Max 500 750 3.9 6.5 1 Unit A V V A 3.3 4 4.5 Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 600V IC = 300A R G = 3 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 300A R G = 3 VGE = 15V Tj = 125C VBus = 600V IC = 300A Tj = 125C R G = 3 Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Min Typ 21 2.9 1.52 120 50 310 30 130 60 360 40 25 Max Unit nF ns ns mJ 15 Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Min 1200 Typ Max 250 500 Unit V A A V ns APTGF300A120G - Rev 2 July, 2006 Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=1200V IF = 300A IF = 300A VR = 600V di/dt =4500A/s 300 2.1 1.9 120 210 22 43 7 15 C mJ www.microsemi.com 2-5 APTGF300A120G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.07 0.12 150 125 100 5 3.5 280 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGF300A120G - Rev 2 July, 2006 APTGF300A120G Typical Performance Curve Output Characteristics (V GE=15V) Output Characteristics 600 500 400 IC (A) VGE =12V TJ = 125C VGE =20V VGE =15V 600 500 IC (A) TJ=25C 400 300 200 100 0 0 1 2 3 V CE (V) 4 5 6 T J=125C 300 200 100 0 0 1 2 3 4 V CE (V) 5 6 VGE=9V Transfert Characteristics 600 500 400 E (mJ) IC (A) 300 200 100 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 100 80 E (mJ) 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 Gate Resistance (ohms) VCE = 600V VGE =15V IC = 300A T J = 125C Eon TJ=25C TJ=125C Energy losses vs Collector Current 70 60 50 40 30 20 10 0 0 100 200 300 IC (A) Reverse Bias Safe Operating Area 700 600 500 IC (A) 400 300 200 Er VGE =15V TJ =125C RG=3 Eoff Er VCE = 600V VGE = 15V RG = 3 T J = 125C Eon Eoff 400 500 600 Eoff 100 0 0 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 Thermal Impedance (C/W) 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 IGBT 0 0.00001 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGF300A120G - Rev 2 July, 2006 APTGF300A120G Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100 80 60 40 20 0 0 50 100 150 200 IC (A) 250 300 350 hard switching ZCS ZVS VCE=600V D=50% RG=3 TJ =125C TC=75C Forward Characteristic of diode 600 500 400 IF (A) 300 200 100 0 0 0.5 1 1.5 VF (V) 2 2.5 3 TJ=25C T J=125C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 Thermal Impedance (C/W) 0.12 0.1 0.08 0.06 0.04 0.02 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 1 10 Single Pulse 0.9 0.7 Diode 0 0.00001 rectangular Pulse Duration (Seconds) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF300A120G - Rev 2 July, 2006 |
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